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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: - 9 V
Drain-Source Current at Vgs=0: 100 mA
Id - Continuous Drain Current: 10 mA
Rds On - Drain-Source Resistance: 7 Ohms
Vgs - Gate-Source Breakdown Voltage: - 25 V
Vds - Drain-Source Breakdown Voltage: 15 V
