Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 2.163 g
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 650 mW
Gate-Source Cutoff Voltage: - 3 V
Drain-Source Current at Vgs=0: 30 mA
Forward Transconductance - Min: 7000 uhmo
Rds On - Drain-Source Resistance: 100 Ohms
Vgs - Gate-Source Breakdown Voltage: - 40 V
