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Density: 256 Mbit
Rad Hard: No
Cell Type: NOR
Boot Block: Yes
Interfaces: 4-Wire, DTR, QPI, SPI
Access Time: 8 ns
Timing Type: Synchronous
Architecture: Sectored
Organization: 32M x 8
Interface Type: SPI
Memory Density: 256 Mbit
Number of Words: 32 Mbit
Program Current: 25 mA
Screening Level: Extended Industrial
Address Bus Width: 32 Bit
Block Organization: Symmetrical
Maximum Erase Time: 180/Chip s
Supply Voltage Max: 3.6 V
Supply Voltage Min: 2.3 V
Supply Voltage Nom: 3 V
Clock Frequency Max: 166 MHz
Max Processing Temp: 260 °C
Programming Voltage: 2.3 to 3.6 V
Operating Temperature: -40 to 105 °C
Location Of Boot Block: Bottom|Top
Number of Bits per Word: 8 Bit
Maximum Programming Time: 1/Page ms
Maximum Operating Current: 17 mA
Operating Temperature Max: 105 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 8 ns
Simultaneous Read/Write Support: No
Maximum Operating Supply Voltage: 3.6 V
Minimum Operating Supply Voltage: 2.3 V
Typical Operating Supply Voltage: 3 V
Erase Suspend/Resume Modes Support: Yes
