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Density: 256 Mbit
Package: 64LFBGA
Mounting: Surface Mount
Rad Hard: No
Cell Type: NOR
Pin Count: 64
Boot Block: Yes
Access Time: 70 ns
No. of Pins: 64
Timing Type: Asynchronous
Architecture: Sectored
Organization: 32M x 8
Interface Type: Parallel
Memory Density: 256 Mbit
OE Access Time: 35 ns
Number of Words: 32 Mbit
Program Current: 40 mA
Screening Level: Extended
Supplier Package: LFBGA
Address Bus Width: 24 Bit
Page Read Current: 15 mA
Block Organization: Symmetrical
Maximum Erase Time: 300/Chip s
Product Dimensions: 13 x 11 x 0.9 mm
Supply Voltage Max: 3.6 V
Supply Voltage Min: 2.7 V
Supply Voltage Nom: 3 V
Max Processing Temp: 260 °C
Programming Voltage: 2.7 to 3.6 V
Operating Temperature: -40 to 105 °C
Location Of Boot Block: Top
Number of Bits per Word: 8 Bit
Maximum Page Access Time: 20 ns
Maximum Programming Time: 200/Byte us
Maximum Operating Current: 45 mA
Operating Temperature Max: 105 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 70 ns
Simultaneous Read/Write Support: No
Maximum Operating Supply Voltage: 3.6 V
Minimum Operating Supply Voltage: 2.7 V
Typical Operating Supply Voltage: 3 V
Erase Suspend/Resume Modes Support: Yes
