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Width: 5.21 mm
Height: 21.34 mm
Length: 20.29 mm
Fall Time: 18 ns
Rise Time: 16 ns
Technology: Si
Unit Weight: 6.500 g
Configuration: Dual
Mounting Style: Through Hole
Transistor Type: 2 N-Channel
Qg - Gate Charge: 150 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 180 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 33 ns
Typical Turn-Off Delay Time: 33 ns
Id - Continuous Drain Current: 53 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 75 S
Rds On - Drain-Source Resistance: 20 mOhms
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
