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Width: 10.41 mm
Height: 4.83 mm
Length: 9.65 mm
Fall Time: 44 ns
Rise Time: 49 ns
Technology: Si
Unit Weight: 1.600 g
Channel Mode: Enhancement
REACH - SVHC: Details
Mounting Style: SMD/SMT
Qg - Gate Charge: 47 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 25 ns
Typical Turn-Off Delay Time: 42 ns
Id - Continuous Drain Current: 7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.6 S
Rds On - Drain-Source Resistance: 1.9 Ohms
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 6 V
