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Fall Time: 8 ns
Rise Time: 25 ns
Technology: Si
Unit Weight: 10 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 190 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.3 kW
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 80 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 90 S, 55 S
Rds On - Drain-Source Resistance: 70 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 5 V
