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Width: 5.21 mm
Height: 26.42 mm
Length: 20.29 mm
Fall Time: 40 ns
Rise Time: 55 ns
Technology: Si
Unit Weight: 10 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 350 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 520 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 74 ns
Typical Turn-Off Delay Time: 71 ns
Id - Continuous Drain Current: 29 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 230 mOhms
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 3.5 V
