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Width: 25.42 mm
Height: 12.22 mm
Length: 38.23 mm
Fall Time: 20 ns
Rise Time: 52 ns
Technology: Si
Unit Weight: 30 g
Configuration: Single
Mounting Style: Screw Mount
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 900 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 35 ns
Typical Turn-Off Delay Time: 88 ns
Id - Continuous Drain Current: 168 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 12.9 mOhms
Vds - Drain-Source Breakdown Voltage: 250 V
Vgs th - Gate-Source Threshold Voltage: 3 V
