Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Rise Time: 300 ns
Technology: Si
Unit Weight: 6 g
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 140 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1 kW
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 32 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 270 mOhms
Vds - Drain-Source Breakdown Voltage: 800 V
