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Width: 4.9 mm
Height: 20.3 mm
Length: 15.8 mm
Fall Time: 43 ns
Rise Time: 65 ns
Technology: Si
Unit Weight: 1.600 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 335 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 540 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 43 ns
Typical Turn-Off Delay Time: 123 ns
Id - Continuous Drain Current: 30 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10 S
Rds On - Drain-Source Resistance: 240 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
