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Width: 5.21 mm
Height: 21.34 mm
Length: 16.13 mm
Fall Time: 38 ns
Rise Time: 25 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Mounting Style: Through Hole
Qg - Gate Charge: 92 nC
Transistor Polarity: P-Channel
Pd - Power Dissipation: 190 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 29 ns
Typical Turn-Off Delay Time: 60 ns
Id - Continuous Drain Current: 10 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 11 S
Rds On - Drain-Source Resistance: 790 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4 V
