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Width: 16.05 mm
Height: 5.1 mm
Length: 14 mm
Fall Time: 106 ns
Rise Time: 58 ns
Technology: Si
Unit Weight: 6.500 g
Channel Mode: Depletion
REACH - SVHC: Details
Mounting Style: SMD/SMT
Qg - Gate Charge: 110 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 568 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 28 ns
Typical Turn-Off Delay Time: 33 ns
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.4 S
Rds On - Drain-Source Resistance: 6.5 Ohms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 4.5 V
