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Width: 14 mm
Height: 5.1 mm
Length: 16.05 mm
Fall Time: 27 ns
Rise Time: 46 ns
Technology: Si
Unit Weight: 4.500 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 103 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 462 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 30 ns
Typical Turn-Off Delay Time: 67 ns
Id - Continuous Drain Current: 48 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 85 mOhms
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs th - Gate-Source Threshold Voltage: 4 V
