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Rise Time: 24 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 350 mW, 375 mW
Vgs - Gate-Source Voltage: - 6.5 V, + 6.5 V
Typical Turn-On Delay Time: 12 ns
Typical Turn-Off Delay Time: 50 ns
Id - Continuous Drain Current: 30 mA
Forward Transconductance - Min: 2 mS
Rds On - Drain-Source Resistance: 250 Ohms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 5 V
