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Technology: Si
Unit Weight: 211 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: - 3.5 V
Maximum Drain Gate Voltage: 15 V
Drain-Source Current at Vgs=0: 5 mA
Id - Continuous Drain Current: 2 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1500 uS
Vgs - Gate-Source Breakdown Voltage: - 60 V
Vds - Drain-Source Breakdown Voltage: 60 V
