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Gain: 12.4 dB
Technology: GaN
Unit Weight: 10.466 g
Output Power: 70 W
Mounting Style: Screw Mount
Development Kit: CG2H30070F-TB1
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 4 GHz
Minimum Operating Frequency: DC
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs th - Gate-Source Threshold Voltage: - 3.8 V
