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Gain: 15 dB
Technology: GaN
Output Power: 60 W
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 8 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 6 A
Maximum Operating Temperature: + 225 C
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs th - Gate-Source Threshold Voltage: - 3.8 V
