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Gain: 13 dB
Technology: GaN
Output Power: 120 W
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Number of Channels: 8 Channel
Transistor Polarity: N-Channel
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 4 GHz
Id - Continuous Drain Current: 12 A
Rds On - Drain-Source Resistance: 100 mOhms
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
