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Gain: 11 dB
Technology: GaN
Unit Weight: 3.772 g
Output Power: 25 W
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: CGHV1F025S-TB
Transistor Type: GaN HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Maximum Operating Frequency: 15 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
