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Gain: 17 dB
Technology: GaN
Unit Weight: 2.285 g
Output Power: 25 W
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Number of Channels: 4 Channel
Transistor Polarity: N-Channel
Maximum Operating Frequency: 18 GHz
Minimum Operating Frequency: 10 MHz
Id - Continuous Drain Current: 2 A
Rds On - Drain-Source Resistance: 600 mOhms
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
