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Technology: GaN
Output Power: 500 W
Mounting Style: Screw Mount
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 418 W
Maximum Drain Gate Voltage: - 2.7 V
Maximum Operating Frequency: 3.1 GHz
Minimum Operating Frequency: 2.7 GHz
Id - Continuous Drain Current: 500 mA
Maximum Operating Temperature: + 75 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 150 V
