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Gain: 14 dB
Technology: GaN
Output Power: 525 W
Mounting Style: Screw Mount
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 3.7 GHz
Minimum Operating Frequency: 3.3 GHz
Id - Continuous Drain Current: 24 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 50 Ohms
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 125 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
