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Gain: 11 dB
Technology: GaN
Unit Weight: 37 g
Output Power: 450 W
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Number of Channels: 1 Channel
Maximum Operating Frequency: 5.9 GHz
Minimum Operating Frequency: 5.2 GHz
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 125 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
