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Gain: 13.5 dB
Technology: GaN
Output Power: 200 W
Mounting Style: Screw Mount
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 3.6 GHz
Minimum Operating Frequency: 3.4 GHz
Id - Continuous Drain Current: 4.1 A
Maximum Operating Temperature: + 225 C
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vds - Drain-Source Breakdown Voltage: 150 V
