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Technology: Si
Carrier Life: 4 us
If - Forward Current: 1 A
Vr - Reverse Voltage: 1 kV
Maximum Diode Capacitance: 0.6 pF
Maximum Operating Frequency: 10 GHz
Minimum Operating Frequency: 500 kHz
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Maximum Series Resistance @ Maximum IF: 700 mOhms
