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Gain: 10.5 dB
Technology: GaN
Output Power: 1.7 W
Mounting Style: SMD/SMT
Transistor Type: HEMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 28 W
Maximum Operating Frequency: 3.8 GHz
Minimum Operating Frequency: 3.3 GHz
Id - Continuous Drain Current: 5 A
Maximum Operating Temperature: + 200 C
Rds On - Drain-Source Resistance: 450 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: - 1.8 V
