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Density: 4 Gbit
Package: 63VFBGA
Mounting: Surface Mount
Rad Hard: No
Cell Type: NAND
Pin Count: 63
Boot Block: No
Access Time: 25 ns
IC Mounting: Surface Mount
No. of Pins: 63
Timing Type: Asynchronous
Architecture: Sectored
Organization: 512M x 8
Memory Density: 4 Gbit
Number of Words: 512 Mbit
Program Current: 15 mA
Screening Level: Industrial
Supplier Package: VFBGA
Address Bus Width: 30 Bit
Flash Memory Type: NAND
IC Case / Package: VFBGA
Block Organization: Symmetrical
Maximum Erase Time: 0.0035/Block s
Product Dimensions: 9 x 11 x 0.55 mm
Supply Voltage Max: 3.6 V
Supply Voltage Min: 2.7 V
Supply Voltage Nom: 3 V
Programming Voltage: 2.7 to 3.6 V
Memory Configuration: 512M x 8bit
Operating Temperature: -40 to 85 °C
Number of Bits per Word: 8 Bit
Maximum Programming Time: 0.6/Page ms
Maximum Operating Current: 30 mA
Maximum Random Access Time: 25 ns
Simultaneous Read/Write Support: No
Maximum Operating Supply Voltage: 3.6 V
Minimum Operating Supply Voltage: 2.7 V
Typical Operating Supply Voltage: 3|3.3 V
Erase Suspend/Resume Modes Support: No
