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Density: 4 Gbit
Package: 63VFBGA
Mounting: Surface Mount
Rad Hard: 0
Cell Type: SLC NAND
Boot Block: No
Interfaces: Parallel
ECC Support: Yes
Architecture: Sectored
Interface Type: Parallel
Memory Density: 4 Gbit
Number of Words: 512 MWords
Program Current: 30 mA
Screening Level: Industrial
Block Organization: Symmetrical
Maximum Erase Time: 0.0035/Block s
Supply Voltage Nom: 1.8 V
Operating Temperature: -40 to 85 °C
Number of Bits per Word: 8 Bit
Maximum Programming Time: 0.6/Page ms
Maximum Operating Current: 30 mA
Operating Temperature Max: 85 °C
Operating Temperature Min: -40 °C
Simultaneous Read/Write Support: No
Typical Operating Supply Voltage: 1.8000 V
Erase Suspend/Resume Modes Support: No
