Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Density: 1 Gbit
Package: 64LFBGA
Mounting: Surface Mount
Rad Hard: 0
Cell Type: NOR
Boot Block: No
Interfaces: Parallel
Access Time: 120 ns
ECC Support: No
Architecture: Sectored
Interface Type: Parallel
Memory Density: 1 Gbit
OE Access Time: 30 ns
Number of Words: 128, 64 MWords
Program Current: 30 mA
Screening Level: Industrial
Address Bus Width: 27, 26 Bit
Page Read Current: 20 mA
Block Organization: Symmetrical
Maximum Erase Time: 1000/Chip s
Supply Voltage Nom: 3.3 V
Clock Frequency Max: 80 MHz
Operating Temperature: -40 to 85 °C
Number of Bits per Word: 8, 16 Bit
Maximum Page Access Time: 30 ns
Maximum Programming Time: 0.18/Word ms
Maximum Operating Current: 30 mA
Operating Temperature Max: 85 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 120 ns
Simultaneous Read/Write Support: No
Typical Operating Supply Voltage: 3.3000 V
Erase Suspend/Resume Modes Support: Yes