Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Density: 1 Gbit
Package: 64LFBGA
Mounting: Surface Mount
Rad Hard: No
Cell Type: NOR
Pin Count: 64
Boot Block: Yes
Interfaces: Parallel
Access Time: 110 ns
IC Mounting: Surface Mount
No. of Pins: 64
Timing Type: Asynchronous
Architecture: Sectored
Organization: 128M x 8|64M x 16
Interface Type: Parallel
Memory Density: 1 Gbit
OE Access Time: 30 ns
Number of Words: 128|64 Mbit
Program Current: 35 mA
Screening Level: Industrial
Supplier Package: LFBGA
Address Bus Width: 26 Bit
Flash Memory Type: NOR
IC Case / Package: LFBGA
Page Read Current: 12 mA
Block Organization: Symmetrical
Maximum Erase Time: 500/Chip s
Product Dimensions: 11 x 13 x 0.65 mm
Supply Voltage Max: 3.6 V
Supply Voltage Min: 2.7 V
Supply Voltage Nom: 3 V
Max Processing Temp: 260 °C
Programming Voltage: 2.7 to 3.6 V
Memory Configuration: 128M x 8bit, 64M x 16bit
Operating Temperature: -40 to 85 °C
Location Of Boot Block: Bottom|Top
Number of Bits per Word: 8|16 Bit
Maximum Page Access Time: 25 ns
Maximum Programming Time: 230/Word us
Maximum Operating Current: 40 mA
Maximum Random Access Time: 110 ns
Simultaneous Read/Write Support: No
Maximum Operating Supply Voltage: 3.6 V
Minimum Operating Supply Voltage: 2.7 V
Typical Operating Supply Voltage: 3 V
Erase Suspend/Resume Modes Support: Yes
