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Technology: Si
Mounting Style: SMD/SMT
Qg - Gate Charge: 1.2 nC
Transistor Polarity: N-Channel
Pd - Power Dissipation: 320 mW
Id - Continuous Drain Current: 220 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 1.6 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
