Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 12 ns
Rise Time: 209 ns
Technology: Si
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Split Gate Trench MOSFET
Qg - Gate Charge: 42 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 136 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 20 ns
Typical Turn-Off Delay Time: 25 ns
Id - Continuous Drain Current: 164 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 2.8 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 4 V
