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Fall Time: 20 ns
Rise Time: 5 ns
Technology: Si
Unit Weight: 14.194 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 11 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Vgs - Gate-Source Voltage: - 8 V, + 8 V, - 12 V, + 12 V
Typical Turn-On Delay Time: 18 ns
Typical Turn-Off Delay Time: 43 ns
Id - Continuous Drain Current: 5 A, 4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 9 S
Rds On - Drain-Source Resistance: 38 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
