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Microchip Technology 2N3501UB BJTs - Bipolar Transistors 150V 300MA 500MW Round-End Small-Signal BJT

Name: Microchip Technology 2N3501UB BJTs - Bipolar Transistors 150V 300MA 500MW Round-End Small-Signal BJT
Brand: Microchip Technology

Model2N3501UB

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Technology: Si

Unit Weight: 1.622 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 150 V

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 400 mV