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Technology: Si
Unit Weight: 1.109 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 6.25 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 10 ns
Id - Continuous Drain Current: 350 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 170 mS
Rds On - Drain-Source Resistance: 4 Ohms
Vds - Drain-Source Breakdown Voltage: 10 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
