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Width: 20.5 mm
Height: 5.21 mm
Length: 26.49 mm
Fall Time: 48 ns
Rise Time: 31 ns
Technology: Si
Unit Weight: 10 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 300 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.135 kW
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 50 ns
Typical Turn-Off Delay Time: 170 ns
Id - Continuous Drain Current: 29 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 31 S
Rds On - Drain-Source Resistance: 450 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
