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Type: Power MOSFET
Vgs(th): 1.6 V
Vgs (Max): +10|-8V
Gate Charge (Qg): 37nC
Power consumption: 2.2W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 25V
Continuous drain current: 100A
Input Capacitance (Ciss): 2925pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 1.9mOhm
Drive Voltage (Max Rds On, Min Rds On): 3.3|10V
