Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 92 ns
Rise Time: 125 ns
Technology: SiC
Configuration: Dual
Mounting Style: Screw Mount
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.882 kW
Vgs - Gate-Source Voltage: - 10 V, + 23 V
Typical Turn-On Delay Time: 78 ns
Typical Turn-Off Delay Time: 214 ns
Id - Continuous Drain Current: 689 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 3.2 mOhms
Vds - Drain-Source Breakdown Voltage: 700 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V
