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Vgs(th): 2.5 V
Vgs (Max): +25|-10V
Gate Charge (Qg): 72nC
Power consumption: 175W
Technology System: SiCFET(Silicon Carbide)
Drain to Source voltage: 1200V
Continuous drain current: 25A
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 175mOhm
Drive Voltage (Max Rds On, Min Rds On): 20V
