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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 25 W
DC Current Gain hFE Max: 120 at 250 mA, 1 VDC
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 4 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 30 at 250 mA, 1 VDC
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 400 mV
