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Width: 1.35 mm
Height: 1 mm
Length: 2.2 mm
Technology: Si
Unit Weight: 1 g
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 200 at 2 mA, 5 V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 270
Collector- Emitter Voltage VCEO Max: 65 V
Collector-Emitter Saturation Voltage: 200 mV
