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Fall Time: 3 ns
Rise Time: 3 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Trench MOSFET
Qg - Gate Charge: 800 pC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.1 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 2 ns
Typical Turn-Off Delay Time: 6 ns
Id - Continuous Drain Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2.9 S
Rds On - Drain-Source Resistance: 270 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.25 V
