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Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 2.9 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 417 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 520 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 900 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
