Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Type: Power MOSFET
Vgs(th): 0.6V
Vgs (Max): 8V
Gate Charge (Qg): 8.8nC
Power consumption: 417mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 12V
Continuous drain current: 1.52A
Input Capacitance (Ciss): 500pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 120mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
