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Fall Time: 58 ns
Rise Time: 49 ns
Technology: Si
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Enhanced-Trench Bottom Oxide (e-TBO) MOSFET
Qg - Gate Charge: 135 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 268 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 25 ns
Typical Turn-Off Delay Time: 79 ns
Id - Continuous Drain Current: 320 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 970 uOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 3.6 V
