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Technology: GaN
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 7.6 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 28 W
Vgs - Gate-Source Voltage: - 6 V, + 6 V
Id - Continuous Drain Current: 28 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 7 mOhms
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: 2.1 V
