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Fall Time: 14 ns, 25 ns
Rise Time: 7 ns, 11 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 430 pC, 350 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 330 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6 ns, 13 ns
Typical Turn-Off Delay Time: 20 ns, 48 ns
Id - Continuous Drain Current: 170 mA, 160 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 230 mS, 150 mS
Rds On - Drain-Source Resistance: 4.5 Ohms, 7.5 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V, 50 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V, 2.1 V
