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Technology: Si
Unit Weight: 6.750 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 890 pC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel, PNP
Pd - Power Dissipation: 1.1 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 660 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 580 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
