Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.7 mm
Height: 1 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 20 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 300 at 500 mA, 5 V
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 300 at 500 mA, 5 V at NPN, 200 at 1 A, 5 V at NPN, 300 at 100 mA, 5 V at PNP, 250 at 500 mA, 5 V at PNP
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 500 mV
